Explanation: Power MOSFETs, crucial components in modern switching power supplies like those in RADAR systems, are voltage-controlled devices. To fully turn "on" and minimize power loss, the gate-source voltage (Vgs) must be driven significantly above the device's threshold voltage (Vth). The threshold voltage for most power MOSFETs is typically between 1V and 4V. However, to ensure the MOSFET is fully enhanced (saturated) and achieves its lowest drain-source resistance (Rds(on)), the "high" gate drive voltage needs to be much greater than the threshold. Common gate drive voltages range from 5V for "logic-level" MOSFETs, up to 10V, 12V, or even 15V for standard power MOSFETs in high-power applications. Therefore, a gate voltage change from "low" (typically near 0V) to "high" will be *greater than 2 volts* to ensure efficient and reliable switching. Options A and B represent insufficient voltage swings for proper power MOSFET operation. While D provides a broad range, C correctly identifies the fundamental requirement for the "high" state to be substantially above a minimal threshold for effective turn-on.